Daniel Nkansah

Human Resource and Organisational Development

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Research Summary

(inferred from publications by AI)

The researcher has made significant contributions to the field of semiconductors, focusing on advanced CMOS technologies, including high-performance designs such as the 1.5 V gate length CMOS and the tungsten interpoly plug for SRAM applications. Their work emphasizes the role of thin gate oxide effects in influencing switching characteristics of MOSFETs. Additionally, they have advanced circuit design by exploring metal and surface polishing techniques, exemplified by CMP methods applied to high-performance SRAM. Through these innovations, their research integrates material science with device physics to enhance performance, supported by mechanical deposition studies that advance semiconductor manufacturing practices. This synthesis highlights a comprehensive approach to semiconductor development, covering themes from materials to circuit design and beyond.

Research Themes

All (12 Papers)

Physical Sciences (12 Papers)

All Papers

Comparison of Al electromigration in conventional Al alloy and W-plug contacts to silicon(1993)

Electromigration-induced drift failure of via contacts in multilevel metallization(1992)

A high performance 1.5 V, 0.10 μm gate length CMOS technology with scaled copper metallization(2002)

Effects of flash EEPROM floating gate morphology on electrical behavior of fast programming bits(1999)

Characterization and modeling of fast programming bits in flash EEPROM(2000)

A 180 nm copper/low-k CMOS technology with dual gate oxide optimized for low power and low cost consumer wireless applications(2002)

A highly versatile 0.18 μm CMOS technology with dense embedded SRAM(2002)

Nonerratic behavior of overerased bits in flash EEPROM(1998)

High performance 0.25 μm SRAM technology with tungsten interpoly plug(2002)

Quantification of thin gate oxide impact on the switching characteristics of MOSFETs(1993)

<title>Planarization using chemical mechanical planarization (CMP) on a 16-megabit SRAM with quadruple polysilicon stacks</title>(1994)

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon(1992)

Collaboration Network

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About This Profile

This profile is generated from publicly available publication metadata and is intended for research discovery purposes. Themes, summaries, and trajectories are inferred computationally and may not capture the full scope of the lecturer's work. For authoritative information, please refer to the official KNUST profile.