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A 180 nm copper/low-k CMOS technology with dual gate oxide optimized for low power and low cost consumer wireless applications

Paper Details
Authors:
Geoffrey Yeap
F. Nkansah
J. Chen
S. Jallepalli
Duy-Dong Pham
T. Lii
Amit Nangia
Phúc Duy Lê
Donald L. Hall
D. Menke
Jiale Sun
Arindam Das
P. Gilbert
Feng-Yi Huang
Julian M. Sturtevant
K. Green
Jeng-Hau Lu
J. Benavidas
E. Banks
Jihoon Chung
Craig Lage
Publication Date: 2002-11-07
Semiconductor materials and devicesEngineeringElectrical and Electronic EngineeringPhysical Sciences
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